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Doctoral student in Electrical Engineering focusing on wide bandgap semiconductor devices (PA2026/1709)

Lund University
Sweden

Summary

PhD position in advanced transistors using ultra-wide-bandgap III-nitride materials (AlGaN/AlScN) for RF and power electronics. Design, fabrication, and electrical characterization in a collaborative, industry-connected environment. Doctoral training with courses, seminars, and conferences.

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