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PhD (M/F) : Multiscale Study of High-Quality 3C-SiC Growth by TSM (Travelling Solvent Method)

The French National Centre for Scientific Research (CNRS)
France

Summary

PhD project investigating 3C-SiC crystal growth via the Travelling Solvent Method using high-temperature experiments, multiphysics simulations and advanced characterization to achieve ultra-low stacking fault densities for medium-voltage power electronics.

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