PhD student in Deep characterization of 2D h-BN layers and its subsequent GaN based heterostructures epitaxied on Sapphire substrates for device fabrication optimization using artificial intelligence. (M/F)
The French National Centre for Scientific Research (CNRS)
France
Summary
PhD position in a joint lab researching hexagonal boron nitride epitaxy for next-gen optoelectronics. AI-guided MOVPE optimization, advanced characterization (XRD, AFM, SEM, PL, CL), and device fabrication (LEDs, transistors) to validate epitaxial improvements.
