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Postdoctoral Researcher – Ultra-wide Bandgap Power Electronic Device Fabrication

National Laboratory of the Rockies
United States of America

Summary

Advance ultra-wide bandgap power device fabrication via TCAD design, epitaxial growth, and cleanroom processing of Ga2O3 and AlGaN diodes/transistors, focusing on higher breakdown voltage, reduced interface defects, and comprehensive device characterization.

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